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| KSC5305D KSC5305D High Voltage High Speed Power Switch Application * Built-in Free-wheeling Diode makes efficient anti saturation operation * Suitable for half bridge light ballast Applications * No need to interest an hFE value because of low variable storage-time spread even though corner spirit product * Low base drive requirement B Equivalent Circuit C 1 E TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25C) Junction Temperature Storage Temperature Value 800 400 12 5 10 2 4 75 150 - 65 ~ 150 Units V V V A A A A W C C Thermal Characteristics TC=25C unless otherwise noted Symbol Rjc Rja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.65 62.5 Unit C/W (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob tON tSTG tF tSTG tF VF trr Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn ON Time Storage Time Fall Time Storage Time Fall Time Diode Forward Voltage * Reverse recovery time (di/dt = 10A/s) Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.8A VCE=1V,IC=2A IC=0.8A, IB=0.08A IC=2A, IB=0.4A IC=0.8A, IB=0.08A IC=2A, IB=0.4A VCB = 10V, f=1MHz VCC=300V, IC =2A IB1 = 0.4A, IB2=-1A RL = 150 VCC=15V,VZ=300V IC = 2A,IB1 = 0.4A IB2 = -0.4A, LC=200H IF = 1A IF = 2A IF = 0.4A IF = 1A IF = 2A Min. 800 400 12 22 8 Typ. 800 1.4 1.9 Max. 10 10 0.4 0.5 1.0 1.0 75 150 2 0.2 2.25 150 1.5 1.6 V V V V pF ns s s s ns V V ns s s Units V V V A A *Pulse Test : Pulse Width=5mS, Duty cycles 10% (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D Typical Characteristics 5 IC[A], COLLECTOR CURRENT 4 hFE, DC CURRENT GAIN 3 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA 100 Ta = 125 C 25 C -25 C o o o VCE = 1V 10 2 IB = 50mA 1 IB = 0 0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 o 10 VCE = 5V IC = 10 IB Ta = 125 C hFE, DC CURRENT GAIN 25 C -20 C o o 1 V BE(sat) 10 VCE(sat) 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 10 IC = 5IB IC = 5IB VCE(sat)[V], SATURATION VOLTAGE 25 C 1 VBE[V], SATURATION VOLTAGE o Ta = 125 C 0.1 o 1 -20 C 25 C Ta = 125 C o o o -20 C o 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D Typical Characteristics (Continued) 10 1000 VCC = 300V IC = 5IB1 = -2.5IB2 f = 1MHz 1 Cob[pF], CAPACITANCE tSTG tSTG, tF [s], TIME 100 tF 0.1 10 0.01 0.1 1 1 10 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 7. Switching Time Figure 8. Collector Output Capacitance 1.6 10 trr[s], REVERSE RECOVERY TIME 1.4 1.2 VF[V], FORWARD DIODE VOLTAGE 1.0 1.5 2.0 1 1.0 0.8 0.1 0.01 0.1 1 10 If[A], FORWARD CURRENT IF[A], FORWARD DIODE CURRENT Figure 9. Reverse Recovery Time Figure 10. Forward Diode Voltage 100 100 IC[A], COLLECTOR CURRENT 10 1s 10s DC 1 PC[W], POWER DISSIPATION 80 60 5ms 1ms 40 0.1 20 0.01 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 11. Safe Operating Area Figure 12. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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